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| Categories | SiC Epitaxial Wafer |
|---|---|
| Brand Name: | GaNova |
| Certification: | UKAS/ISO9001:2015 |
| Place of Origin: | Suzhou China |
| Payment Terms: | T/T |
| Delivery Time: | 3-4 week days |
| Packaging Details: | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Model Number: | JDCD03-001-001 |
| Crystal Form: | 4H-N/S |
| Product Name: | 2inch diameterSilicon Carbide (SiC)Substrate Specification |
| Diameter: | 50.8mm±0.38mm |
| Secondary Flat Orientation: | Silicon face up:90°CW. from Prime flat±5.0° |
| Primary Flat Length: | 15.9mm±1.7mm 8.0 mm±1.7 mm |
| Secondary Flat Length: | No Secondary Flat |
| Orthogonal Misorientation: | ±5.0° |
| Thickness a: | 260μm±25μm |
P-Level 4H-N/SI<0001>260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices
JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave devices
Overview
Key features
Optimizes targeted performance and total cost of ownership for next
generation power electronics devices
Large diameter wafers for improved economies of scale in
semiconductor manufacturing
Range of tolerance levels to meet specific device fabrication needs
High crystal quality
Low defect densities
| 2inch diameterSilicon Carbide (SiC)Substrate Specification | ||
| Grade | Production Grade(P Grade) | |
| Dimeter | 50.8mm±0.38mm | |
| Thickness | 260μm±25μm | |
| Wafer Orientation | On axis: <0001>±0.5° for 4H-N/4H-SI, Off axis: 4.0° toward <1120 > ±0.5° for 4H-N/4H-SI | |
| Micropipe Density | ≤5cm-² | |
| Resistivity | 4H-N | 0.015~0.028Ω·cm |
| 4H-SI | ＞1E5Ω·cm | |
| Primary Flat Orientation | {10-10}±5.0° | |
| Primary Flat Length | 15.9mm±1.7mm | |
| Primary Flat Length | 8.0 mm±1.7 mm | |
| Secondary Flat Orientation | Silicon face up:90°CW. from Prime flat±5.0° | |
| Edge Exclusion | 1mm | |
| TTV/Bow/Warp | ≤15μm/≤25μm/≤25μm | |
| Roughness | Silicon face | CMP Ra≤0.5nm |
| Carbon face | Polish Ra≤1.0nm | |
| Edge Cracks By High Intensity Light | None | |
| Hex Plates By High Intensity Light | Cumulative area≤1% | |
| Polytype Areas By High Intensity Light | None | |
| Silicon Surface Scratches By high Intensity Light | 3 scratches to 1 x wafer diameter cumulative length | |
| Edge Chips High By Intensity Light light | None | |
| Silicon Surface Contamination By High Intensity | None | |
| Packaging | Multi-wafer Cassette or Single Wafer Container | |
Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
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