NPN Digital Transistor ROHM DTC143EMT2L Featuring Built in Bias Resistors for Simplified Circuit Setup

Categories	Single, Pre-Biased Bipolar Transistors
Output Voltage(VO(on)):	300mV@10mA,0.5mA
Input Resistor:	4.7kΩ
Resistor Ratio:	1
Collector - Emitter Voltage VCEO:	50V
Description:	Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-723
Mfr. Part #:	DTC143EMT2L
Model Number:	DTC143EMT2L
Package:	SOT-723

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Hefei Purple Horn E-Commerce Co., Ltd.

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NPN Digital Transistor ROHM DTC143EMT2L Featuring Built in Bias Resistors for Simplified Circuit Setup

Product Overview

The ROHM DTC143E series are NPN digital transistors featuring built-in bias resistors (R1 = R2 = 4.7k). This integrated design simplifies circuit configuration, particularly for inverter circuits, by eliminating the need for external input resistors. Designed for easy operation by simply setting on/off conditions, these transistors are suitable for inverter, interface, and driver applications. Complementary PNP types are available in the DTA143E series.

Product Attributes

Brand: ROHM
Type: NPN Digital Transistor (Bias Resistor Built-in)

Technical Specifications

Model	Package	Package Size	Taping Code	Reel Size (mm)	Tape Width (mm)	Quantity (pcs)	Marking	VCC (MAX.)	IC (MAX.)	R1	R2
DTC143EM	SOT-723	1212	T2L	180	8	8000	23	50V	100mA	4.7k	4.7k
DTC143EEB	SOT-416FL	1616	TL	180	8	3000	23	50V	100mA	4.7k	4.7k
DTC143EE3	SOT-416	1616	TL	180	8	3000	23	50V	100mA	4.7k	4.7k
DTC143EUB	SOT-323FL	2021	TL	180	8	3000	23	50V	100mA	4.7k	4.7k
DTC143EU3	SOT-323	2021	T106	180	8	3000	23	50V	100mA	4.7k	4.7k
DTC143EKA	SOT-346	2928	T146	180	8	3000	23	50V	100mA	4.7k	4.7k

Parameter	Symbol	Conditions	Values (Min.)	Values (Typ.)	Values (Max.)	Unit
Supply voltage	VCC				50	V
Input voltage	VIN		-10		30	V
Output current	IO				100	mA
Collector current	IC(MAX)*1				100	mA
Power dissipation	PD*2	DTC143EM			150	mW
Power dissipation	PD*2	DTC143EEB			150	mW
Power dissipation	PD*2	DTC143EE3			150	mW
Power dissipation	PD*2	DTC143EUB			200	mW
Power dissipation	PD*2	DTC143EU3			200	mW
Power dissipation	PD*2	DTC143EKA			200	mW
Junction temperature	Tj				150
Range of storage temperature	Tstg		-55		+150
Input voltage (OFF)	VI(off)	VCC = 5V, IO = 100A	-	-	0.5	V
Input voltage (ON)	VI(on)	VO = 0.3V, IO = 20mA	3.0	-	-	V
Output voltage (ON)	VO(on)	IO = 10mA, II = 0.5mA	-	100	300	mV
Input current	II	VI = 5V	-	-	1.8	mA
Output current (OFF)	IO(off)	VCC = 50V, VI = 0V	-	-	500	nA
DC current gain	GI	VO = 5V, IO = 10mA	30	-	-	-
Input resistance	R1		-	3.29	6.11	k
Resistance ratio	R2/R1		-	0.8	1.2	-
Transition frequency	fT*1	VCE = 10V, IE = -5mA, f = 100MHz	-	250	-	MHz

*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.

2406121055_ROHM-DTC143EMT2L_C2984994.pdf

NPN Digital Transistor ROHM DTC143EMT2L Featuring Built in Bias Resistors for Simplified Circuit Setup

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