42A 100V Semiconductor IC Chip IRFP150NPBF TO-247 N Channel MOSFET
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IRFP150NPBF TO-247 42A 100V N-channel MOSFET Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IRFP150NPBF is manufactured by IRFP150NPBF and distributed by Stjk. As one of the leading distributors of electronic products, we ......
STJK(HK) ELECTRONICS CO.,LIMITED
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IPB0401NM5S Semiconductor Diode Transistor Electronics Component TRENCH 100V
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... Model IPB0401NM5S RoHS Yeah Product category Electronic components Minimum operating temperature -30C Maximum operating temperature 125C Minimum ......
Shenzhen Zhaocun Electronics Co., Ltd.
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V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier
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... Rectifier DPAK Discrete Semiconductor Products V20PWM45 :High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 A V20PWM45C High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky)...
Guangzhou Topfast Technology Co., Ltd.
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V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier
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...Semiconductor High Current Density TMBS Trench MOS Barrier Schottky Rectifier DPAK Discrete Semiconductor Products V20PWM45 :High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 A V20PWM45C High Current Density Surface-Mount TMBS® (Trench......
Angel Technology Electronics Co
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FDPF045N10A 100V Mosfet Power Transistor N Channel Fast Switching Speed Low Gate Charge
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... Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on...
ChongMing Group (HK) Int'l Co., Ltd
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NRVTSS3100ET3G 3A 100V Low Leakage Rectifier Trench Based Schottky
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NRVTSS3100ET3G Rectifier, Very Low Leakage 3A, 100V 1.Low Leakage Trench-based Schottky Rectifier Features •Fine Lithography Trench−based Schottky Technology for Very LowForward Voltage and Low Leakage •Fast Switching with Exceptional Temperature ......
Shenzhen Hongxinwei Technology Co., Ltd
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13P10D -100V Mosfet Power Transistor For Power Management ESD Protested
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...100V Mosfet Power Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications. It is ESD protested. FEATURES VDS =-100V,ID =-13A RDS(ON) <170m @ VGS=-10V (Typ:145m ) Super high dense cell design Advanced trench......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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STMicroelectronics H2PAK-6 N Channel Mosfet STH315N10F7-6 100V 60A 315W
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...amplification, or switching, in an electronic circuit. Some common examples of Discrete Semiconductor Products include diodes, transistors, and thyristors. Discrete Semiconductor Products common features include: - Maximum voltage and current ratings: This...
Shenzhen GS Electronic Technology Co., Ltd. CN
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High Power MOSFET NTMFS10N3D2C N‐Channel Shielded Gate Power Trench® 100V, 151A, 3.2mΩ
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High Power MOSFET NTMFS10N3D2C N‐Channel Shielded Gate Power Trench® 100V, 151A, 3.2mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over ......
Sunbeam Electronics (Hong Kong) Limited
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RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N
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...Trench Field Stop 650 V 73 A 272 W Through Hole TO-247N ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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