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Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0.

Solid Power-DS-SPS600B12G6-S0402G0037 V-1.0.

1200V 600A IGBT Half Bridge Module

Features:

1200V Trench+ Field Stop technology
Freewheeling diodes with fast and soft reverse recovery
VCE(sat) with positive temperature coefficient
Low switching losses
Short circuit ruggedness

Typical Applications:

Motor/Servo Drives
Wind Turbines Converters
PV Inverters
Energy Storage Converters
UPS

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		4.0			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al2O3
Creepage distance	dCreep	terminal to heatsink		29.0			mm
	dCreep	terminal to terminal		23.0
Clearance	dClear	terminal to heatsink		23.0			mm
	dClear	terminal to terminal		11.0
Comparative tracking index	CTI			＞400

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				20		nH
Module lead resistance, terminals - chip	RCC’+EE’		TC=25℃		0.70		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M6			3.0		6.0	Nm
Terminal connection torque	M6			2.5		5.0	Nm
Weight	G				320		g

IGBT

Maximum Rated Values / 最大额定值

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		Tvj=25℃	1200	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	tp≤10μs,D=0.01		±30	V
Continuous DC collector current	IC		TC=25℃	700	A
Continuous DC collector current	IC		TC=80℃	550	A
Pulsed collector current,tp limited by Tjmax	ICpulse			1200	A
Power dissipation	Ptot			2142	W

Characteristic Values / 特征值

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
集电极－发射极饱和电压 Collector-emitter saturation voltage	VCE(sat)	IC=600A, VGE=15V	Tvj=25℃		2.00	2.40	V
			Tvj=125℃		2.40
			Tvj=150℃		2.50
栅极阈值电压 Gate threshold voltage	VGE(th)	VCE=VGE, IC=24mA		5.5	6.3	7.0	V
集电极-发射极截止电流 Collector-emitter cut-off current	ICES	VCE=1200V, VGE=0V	Tvj=25℃			100	µA
集电极-发射极截止电流 Collector-emitter cut-off current	ICES	VCE=1200V, VGE=0V	Tvj=150℃			5	mA
栅极-发射极漏电流 Gate-emitter leakage current	IGES	VCE=0V,VGE=±20V, Tvj=25℃		-200		200	nA
栅极电荷 Gate Charge	QG	VCE=600V, IC=600A , VGE=±15V			5.0		μC
输入电容 Input Capacitance	Cies	VCE=25V, VGE=0V, f =100kHz			80.0		nF
输出电容 Output Capacitance	Coes				2.85
反向传输电容 Reverse Transfer Capacitance	Cres				1.48
内部栅极电阻 Internal gate resistor	RGint	Tvj=25℃			2		Ω
开通延迟时间(电感负载) Turn-on delay time,inductive load	td(on)	VCC=600V,IC=600A RG=1.5Ω, VGE=±15V	Tvj=25℃		340		ns
			Tvj=125℃		376		ns
			Tvj=150℃		384		ns
上升时间(电感负载) Rise Time,inductive load	tr		Tvj=25℃		108		ns
			Tvj=125℃		124		ns
			Tvj=150℃		132		ns
关断延迟时间(电感负载) Turn-off delay time,inductive load	td(off)	VCC=600V,IC=600A RG=1.5Ω, VGE=±15V	Tvj=25℃		616		ns
			Tvj=125℃		676		ns
			Tvj=150℃		682		ns
下降时间(电感负载) Fall time,inductive load	tf		Tvj=25℃		72		ns
			Tvj=125℃		76		ns
			Tvj=150℃		104		ns
开通损耗能量(每脉冲) Turn-on energy loss per pulse	Eon	VCC=600V,IC=600A RG=1.5Ω, VGE=±15V	Tvj=25℃		57.9		mJ
			Tvj=125℃		82.2		mJ
			Tvj=150℃		91.4		mJ
关断损耗能量(每脉冲) Turn off Energy loss per pulse	Eoff		Tvj=25℃		45.2		mJ
			Tvj=125℃		55.3		mJ
			Tvj=150℃		58.7		mJ
短路数据 SC data	ISC	VGE≤15V, VCC=800V	tp≤10µs Tvj=150℃			2500	A
IGBT结-外壳热阻 IGBT thermal resistance,junction-case	RthJC					0.07	K /W
工作温度 Operating Temperature	TJop			-40		150	℃

Diode / 二极管

Maximum Rated Values / 最大额定值

Item	Symbol	Conditions		Values	Unit
反向重复峰值电压 Repetitive reverse voltage	VRRM		Tvj=25℃	1200	V
连续正向直流电流 Continuous DC forward current	IF			600	A
二极管正向不重复峰值电流 Diode pulsed current,tp limited by TJmax	IFpulse			1200	A

Characteristic Values / 特征值

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
正向电压 Forward voltage	VF	IF=600A , VGE=0V	Tvj=25℃		1.65	2.00	V
			Tvj=125℃		1.80
			Tvj=150℃		1.80
反向恢复时间 Reverse recovery time	Trr	IF=600A dIF/dt=-4900A/μs (Tvj=150°C) VR=600V, VGE=-15V	Tvj=25℃		224		ns
			Tvj=125℃		300
			Tvj=150℃		335
反向恢复峰值电流 Peak reverse recovery current	IRRM		Tvj=25℃		624		A
			Tvj=125℃		649
			Tvj=150℃		665
反向恢复电荷 Reverse recovery charge	QRR		Tvj=25℃		95		µC
			Tvj=125℃		134.9
			Tvj=150℃		147.4
反向恢复损耗(每脉冲) Reverse recovery energy loss per pulse	Erec		Tvj=25℃		35.4		mJ
			Tvj=125℃		49.7
			Tvj=150℃		55.9
二极管结-外壳热阻 Diode thermal resistance,junction-case	RthJCD					0.13	K /W
工作温度 Operating Temperature	TJop			-40		150	℃

Product Tags:

Half Bridge IGBT Modules 62mm

62mm IGBT Half Bridge Module

600A IGBT Half Bridge Module

Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0.

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Categories	IGBT Modules 62mm
Model Number:	SPS600B12G6
Collector Current:	100A
Collector-Emitter Voltage:	1200V
Current:	100A
Gate Charge:	100nC
Gate-Emitter Voltage:	±20V
Isolation Voltage:	2500V
Maximum Operating Temperature:	150°C
Mounting Style:	Screw
Output Current:	100A
Package Type:	62mm
Reverse Recovery Time:	100ns
Switching Frequency:	20kHz
Thermal Resistance:	0.2°C/W
Voltage:	1200V