1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

MOSFET

Maximum Rated Values / 最大额定值

Item

Symbol

Conditions

Value

Units

漏极－源极电压

Drain-source voltage

VDSS

Tvj=25°C

1200

V

连续漏极直流电流

Continuous DC drain current

ID

VGS=20V, TC=25°C, Tvjmax=175°C

VGS=20V, TC=85°C, Tvjmax=175°C

400

300

A

脉冲漏极电流

Pulsed drain current

ID pulse

Pulse width tp limited by Tvjmax

1200

A

总功率损耗

Total power dissipation

Ptot

TC=25°C, Tvjmax=175°C

1153

W

栅极峰值电压

Maximum gate-source voltage

VGSS

-10/25

V

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

漏极－源极通态电阻

Drain-source on resistance

RDS( on)

ID=300A,VGS=20V

Tvj=25°C

Tvj=125°C

Tvj=150°C

4.0

5.4 6.0

5.6

mΩ

mΩ

mΩ

栅极阈值电压

Gate threshold voltage

VGS(th)

IC=90mA, VCE=VGE, Tvj=25°C

IC=90mA, VCE=VGE, Tvj=150°C

1.9

2.4

1.6

4.0

V

跨导

Transconductance

gfs

VDS = 20 V, IDS = 300 A, Tvj=25°C

VDS = 20 V, IDS = 300 A, Tvj=150°C

211

186

S

栅极电荷

Gate charge

QG

VGE=-5V…+20V

1170

nC

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

2.0

Ω

输入电容

Input capacitance

Cies

f=1MHz,Tvj=25°C,VDS=1000V, VAC=25mV, VGE=0V

25.2

nF

输出电容

Output capacitance

Coes

f=1MHz,Tvj=25°C,VDS=1000V, VAC=25mV, VGE=0V

1500

pF

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz,Tvj=25°C,VDS=1000V, VAC=25mV, VGE=0V

96

pF

零栅电压漏极电流

Zero gate voltage drain current

IDSS

VDS=1200V, VGS=0V, Tvj=25°C

300

μA

栅极-源极漏电流

Gate-source leakage current

IGSS

VDS=0V, VGS=20V, Tvj=25°C

100

nA

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on)

Tvj=25°C Tvj=125°C Tvj=150°C

76

66

66

ns

ns

ns

上升时间(电感负载)

Rise time, inductive load

tr

Tvj=25°C Tvj=125°C Tvj=150°C

62

56

56

ns

ns

ns

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

ID=300A, VDS=600V

VGS=-5/20V

RGon=2.5Ω

Tvj=25°C

Tvj=125°C

Tvj=150°C

308

342

342

ns

ns

ns

下降时间(电感负载)

Fall time, inductive load

tf

RGoff=2.5Ω

Lσ = 56 nH

Inductive Load,

Tvj=25°C

Tvj=125°C

Tvj=150°C

94

92

92

ns

ns

ns

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

Tvj=25°C Tvj=125°C Tvj=150°C

5.55

4.35

4.35

mJ

mJ

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

Tvj=25°C Tvj=125°C Tvj=150°C

12.10

12.35

12.35

mJ

mJ

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per MOSFET / 每个 MOSFET

0.12

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Diode /二极管

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value

Units

连续正向直流电流

Continuous diode forward current

IF

VGS = -5 V, TC = 25 ˚C

400

A

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VSD

IF=300A, VGS=0V

Tvj=25°C Tvj=150°C

1.60

2.00

1.80

V

V

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.13

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Module / 模块

Item

Symbol

Conditions

Value

Units

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

2.5

kV

模块基板材料

Material of module baseplate

Cu

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Creepage distance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

29.0

23.0

mm

电气间隙

Clearance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

23.0

11.0

mm

相对电痕指数

Comparative tracking index

CTI

> 400

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

20

nH

模块引线电阻,端子-芯片

Module lead resistance, terminals - chip

RCC’+EE’

TC=25°C

0.465

mΩ

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭矩

Mounting torque for module mounting

M5

2.50

5.00

Nm

端子联接扭矩

Terminal connection torque

M6

3.00

5.00

Nm

重量

Weight

G

300

g