1200V 300A IGBT Modules 62mm DS-SPS300B12G6H4-S04020027 V1.0

IGBT, Inverter / IGBT,逆变器

Maximum Rated Values / 最大额定值

Item

Symbol

Conditions

Value

Units

集电极－发射极电压

Collector-emitter voltage

VCES

Tvj=25°C

1200

V

连续集电极直流电流

Continuous DC collector current

IC

TC=100°C, Tvj=175°C

TC=25°C, Tvj=175°C

300

400

A

A

集电极重复峰值电流

Peak repetitive collector current

ICRM

tp=1ms

600

A

总功率损耗

Total power dissipation

Ptot

TC=25°C, Tvj=150°C

1500

W

栅极－发射极峰值电压

Maximum gate-emitter voltage

VGES

±20

V

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

集电极－发射极饱和电压

Collector-emitter saturation voltage

VCE(sat)

IC=300A,VGE=15V

Tvj=25°C Tvj=125°C Tvj=150°C

2.10

2.50

2.90

3.00

3.00

V

V

V

栅极阈值电压

Gate threshold voltage

VGE(th)

IC=12mA, VCE=VGE, Tvj=25°C

5.0 6.0 7.0

V

栅极电荷

Gate charge

QG

VGE=-15V…+15V

1.5

µC

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

2.5

Ω

输入电容

Input capacitance

Cies

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

12.8

nF

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

0.62

nF

集电极-发射极截止电流

Collector-emitter cut-off current

ICES

VCE=1200V, VGE=0V, Tvj=25°C

5.00

mA

栅极-发射极漏电流

Gate-emitter leakage current

IGES

VCE=0V, VGE=20V, Tvj=25°C

200

nA

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on)

Tvj=25°C Tvj=125°C Tvj=150°C

90

105

110

ns

ns

ns

上升时间(电感负载)

Rise time, inductive load

tr

Tvj=25°C Tvj=125°C Tvj=150°C

64

66

70

ns

ns

ns

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

IC=300A, VCE=600V

VGE=±15V

RGon=2 Ω

RGoff=2 Ω

Inductive Load,

Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C

285

310

330

ns

ns

ns

下降时间(电感负载)

Fall time, inductive load

tf

55

65

65

ns

ns

ns

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

Tvj=25°C Tvj=125°C Tvj=150°C

21.3

29.5

33.1

mJ

mJ

mJ

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

Tvj=25°C Tvj=125°C Tvj=150°C

11.2

15.7

16.5

mJ

mJ

mJ

短路数据

SC data

ISC

VGE≤15V, VCC=800V

VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=150°C

1200

A

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.10

K/W

工作温度

Temperature under switching conditions

Tvjop

-40

150

°C

Diode, Inverter / 二极管,逆变器

Maximum Rated Values /最大额定值

Item

Symbol Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM Tvj=25°C

1200

V

连续正向直流电流

Continuous DC forward current

IF

300

A

正向重复峰值电流

Peak repetitive forward current

IFRM tp=1ms

600

A

Characteristic Values / 特征值

Item

Symbol Conditions

Min.

Typ. Max.

Units

正向电压

Forward voltage

VF IF=300A

Tvj=25°C

Tvj=125°C

Tvj=150°C

2.30

2.50

2.50

2.70

V

V

V

反向恢复峰值电流

Peak reverse recovery current

IRM

Qr

Erec

IF=300A

-diF/dtoff=4000A/µs

VR = 600 V

VGE=-15V

Tvj=25°C

Tvj=125°C

Tvj=150°C

182

196

199

A

A

A

反向恢复电荷

Recovery charge

Tvj=25°C

Tvj=125°C

Tvj=150°C

23.5

35.5

35.5

µC

µC

µC

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

Tvj=25°C

Tvj=125°C

Tvj=150°C

7.3

12.7

14.6

mJ

mJ

mJ

结－外壳热阻

Thermal resistance, junction to case

RthJC Per diode / 每个二极管

0.23

K/W

工作温度

Temperature under switching conditions

Tvjop

-40

150

°C

Module / 模块

Item

Symbol

Conditions

Value

Units

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

3.0

kV

模块基板材料

Material of module baseplate

Cu

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Creepage distance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

29.0

23.0

mm

电气间隙

Clearance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

23.0

11.0

mm

相对电痕指数

Comperative tracking index

CTI

>400

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

20

nH

模块引脚电阻, 端子-芯片

Module Lead Resistance ,Terminals-Chip

RCC’+EE’

RAA’+CC’

0.7

mΩ

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭距

Mounting torque for module mounting

M

M6

3.00

6.00

Nm

端子联接扭距

Terminal connection torque

M

M6

2.50

5.00

Nm

重量

Weight

G

320

g